FDC3616N

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.07 Ohms
Continuous Drain Current : 3.7 A
Configuration : Single Quint Source


Features:

• 3.7 A, 100 V. RDS(ON) = 70 m @ VGS = 10 V RDS(ON) = 80 m @ VGS = 6.0
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (23nC typical)
• High power and current handling capability
• Fast switching speed.


Application

• DC/DC converter
• Load Switching


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		100 ± 20 3.7 20 2 1.1 −55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

60 111 0.5

°C/W °C/W

Description

This FDC3616N N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Parameters:

Technical/Catalog Information	FDC3616N
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	3.7A
Rds On (Max) @ Id, Vgs	70 mOhm @ 3.7A, 10V
Input Capacitance (Ciss) @ Vds	1215pF @ 50V
Power - Max	1.1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	32nC @ 10V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC3616N FDC3616N FDC3616NDKR ND FDC3616NDKRND FDC3616NDKR