MOSFET Dual N-Ch 100V Spec Power Trench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1 A | ||
Resistance Drain-Source RDS (on) : | 0.5 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
100 |
V |
VGSS |
Gate-Source Voltage |
±20 |
V |
ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
1.0 |
A |
4.0 | |||
PD |
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c) |
0.96 |
W |
0.9 | |||
0.7 | |||
TJ, Tstg |
Operating and Storage Junction Temperature Range |
−55 to +150 |
°C |
These FDC3601N N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices FDC3601N have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Technical/Catalog Information | FDC3601N |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 1A |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 1A, 10V |
Input Capacitance (Ciss) @ Vds | 153pF @ 50V |
Power - Max | 700W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 5nC @ 10V |
Package / Case | SuperSOT-6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC3601N FDC3601N |