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FDB8880

MOSFET NCH PWR TRNCH MOSFET 30V 54A 11.6 OHMS

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SeekIC No. : 00148271 Detail

FDB8880: MOSFET NCH PWR TRNCH MOSFET 30V 54A 11.6 OHMS

FDB8880 Data Sheet

floor Price/Ceiling Price

US $ .35~.58 / Piece | Get Latest Price
Part Number:
FDB8880
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.58
  • $.46
  • $.41
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 54 A
Resistance Drain-Source RDS (on) : 0.0116 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 54 A
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.0116 Ohms at 10 V


Features:

rDS(ON)= 14.5mΩ , VGS= 4.5V, ID =40A
rDS(ON)= 11.6mΩ , VGS= 10V, ID = 40A
High performance trench technology for extremely low rDS(ON)
Low gate charge
High power and current handling capability


Application

 DC/DC converters


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
Continuous (TC = 25, VGS = 10V)
        54
A
Continuous (TC = 100, VGS = 10V)
48
A
Continuous (Tamb = 25, VGS = 10V, RJA = 43/W)
11
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
31
mJ
PD
Power dissipation
55
W
Derate above 25
0.37
W/°C
TJ, Tstg
Operating and Storage Temperature
-55 to 175
°C



Description

This FDB8880 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low rDS(ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDB8880
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C54A
Rds On (Max) @ Id, Vgs11.6 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 1240pF @ 15V
Power - Max55W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs29nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB8880
FDB8880



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