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FDB8870_F085

MOSFET 30V 160A 3.9Mohm N-CH POWERTRENCH

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SeekIC No. : 00159602 Detail

FDB8870_F085: MOSFET 30V 160A 3.9Mohm N-CH POWERTRENCH

FDB8870_F085 Data Sheet

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Part Number:
FDB8870_F085
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.0039 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : D2PAK
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.0039 Ohms at 10 V


Parameters:

Technical/Catalog InformationFDB8870_F085
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C160A
Rds On (Max) @ Id, Vgs3.9 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 5200pF @ 15V
Power - Max160W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs132nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB8870_F085
FDB8870_F085



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