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FDB8870

MOSFET 30V N-Channel PowerTrench

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SeekIC No. : 00149567 Detail

FDB8870: MOSFET 30V N-Channel PowerTrench

FDB8870 Data Sheet

floor Price/Ceiling Price

US $ .7~.98 / Piece | Get Latest Price
Part Number:
FDB8870
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.98
  • $.88
  • $.77
  • $.7
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 160 A
Resistance Drain-Source RDS (on) : 0.0039 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Package / Case : TO-263
Continuous Drain Current : 160 A
Resistance Drain-Source RDS (on) : 0.0039 Ohms at 10 V


Features:

* rDS(ON)  = 3.9m, VGS = 10V, ID= 35A
* rDS(ON) = 4.4m, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low rDS(ON)
* Low gate charge
* High power and current handling capability


Application

* DC/DC converters


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 30
 V
VGS
Gate to Source Voltage		 ±20
 V
ID Drain Current
Continuous (TC = 25, VGS = 10V) (Note 1)
 		 160 A
Continuous (CT = 25, VGS = 4.5V) (Note 1)
 		 150 A
Continuous (Tamb = 25, VGS = 10V, with RJA  = 43/W)
  		23 A
Pulsed Figure 4 A
EAS Single Pulse Avalanche Energy (Note 1) 300 mJ
PD Power dissipation 160 W
Derate above 25 1.07 W/
TJ, TSTG
 		 Operating and Storage Temperature -55 to 175



Description

  This FDB8870 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low rDS(ON)  and fast switching speed.




Parameters:

Technical/Catalog InformationFDB8870
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C160A
Rds On (Max) @ Id, Vgs3.9 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 5200pF @ 15V
Power - Max160W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs132nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB8870
FDB8870



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