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FDB8160

MOSFET N-CH 30V 80A D2PAK

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SeekIC No. : 003430628 Detail

FDB8160: MOSFET N-CH 30V 80A D2PAK

FDB8160 Data Sheet

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US $ 1.05~1.05 / Piece | Get Latest Price
Part Number:
FDB8160
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~800
  • Unit Price
  • $1.05
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Series: PowerTrench® Manufacturer: Fairchild Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 80A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 243nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 11825pF @ 15V
Power - Max: 254W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak)    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Current - Continuous Drain (Id) @ 25° C: 80A
Power - Max: 254W
Gate Charge (Qg) @ Vgs: 243nC @ 10V
Manufacturer: Fairchild Semiconductor
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds: 11825pF @ 15V


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