FDB7042L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 50 A
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.0075 Ohms at 10 V


Features:

*50 A, 30 V. R_DS(ON) = 9 m @ V_GS = 4.5 V
                    R_DS(ON) = 7.5 m @ V_GS = 10 V
*Critical DC electrical parameters specified at elevated temperature
*High performance trench technology for extremely low R_DS(ON)
*175 maximum junction temperature rating


Application

* Synchronous rectifier
* DC/DC converter


Specifications

Symbol	Parameter	FDP6030BL	FDB6030BL	Units
VDSS	Drain-Source Voltage	30		V
VGSS	Gate-Source Voltage	±20		V
ID	Drain Current Continuous (Note 1)                        Pulsed         (Note 1)	50		A
		150
PD	Total Power Dissipation @ TC = 25 Derate above 25	83		W
		0.48		W/
TJ, TSTG	Operating and Storage Junction Temperature Range	-65 to +175

Description

  This FDB7042L N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for"low side" synchronous rectifier operation, providing an extremely low RDS(ON) .