FDB7030L

MOSFET N-Ch PowerTrench Logic Level

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SeekIC No. : 00161970 Detail

FDB7030L: MOSFET N-Ch PowerTrench Logic Level

floor Price/Ceiling Price

Part Number:
FDB7030L
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.007 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 80 A
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.007 Ohms at 10 V


Features:

*100 A, 30 V. RDS(ON)  = 0.007 @  VGS=10 V                        
                      RDS(ON)  = 0.010 @  VGS =5 V.      
*Critical DC electrical parameters specified at elevated temperature.
*Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
*High density cell design for extremely low RDS(ON) .
*175°C maximum junction temperature rating.



Specifications

Symbol Parameter FDP7030L FDB7030L Units
VDSS
Drain-Source Voltage 30 V
VGSS
Gate-Source Voltage - Continuous ±20 V
ID
Drain Current - Continuous (Note 1)

- Pulsed (Note 1)
100

A
75
300
PD
Total Power Dissipation @ TC = 25
125 W
Derate above 25 0.83 W/
TJ  ,TSTG
Operating and Storage Temperature Range -65 to 175
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275



Description

  These FDB7030L N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.These devices FDB7030L are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power
loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationFDB7030L
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs7 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 2440pF @ 15V
Power - Max68W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs33nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB7030L
FDB7030L
FDB7030LCT ND
FDB7030LCTND
FDB7030LCT



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