MOSFET N-Channel PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
Resistance Drain-Source RDS (on) : | 0.0065 Ohms at 10 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263AB | Packaging : | Reel |
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage |
30 | V |
VGSS |
Gate-Source Voltage | ±20 |
V |
ID | Drain Current Continuous (Note 1) Pulsed (Note 1) |
80 |
A |
240 | |||
PD | Total Power Dissipation @ TC = 25 Derate above 25 |
68 | W |
0.45 |
W/ | ||
TJ, TSTG | Operating and Storage Junction Temperature Range | 65 to +175 |
This FDB6670AL N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs FDB6670AL feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET FDB6670AL that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDB6670AL has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Technical/Catalog Information | FDB6670AL |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 40A, 10V |
Input Capacitance (Ciss) @ Vds | 2440pF @ 15V |
Power - Max | 68W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 33nC @ 5V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDB6670AL FDB6670AL |