FDB6644

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 50 A
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.0085 Ohms at 10 V


Features:

·  50 A, 30 V. R _DS(ON)=  8.5 mW @ V_GS = 10 V
                       R _DS(ON)=10.5 mW @ V_GS = 4.5 V
·  Low gate charge  (27 nC typical)
·  Fast switching speed
·  High performance trench technology for extremely low R _DS(ON)
·  175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FDP6644	FDB6644	Units
VDSS	Drain-Source Voltage	30		V
VGSS	Gate-Source Voltage	± 16		V
ID	Drain Current - Continuous     (Note 1)                        - Pulsed            (Note 1)	50		A
		150
PD	Total Power  Dissipation @ TC=25                              Derate above 25	125		W
		83		W/
TJ, Tstg	Operating and Storage Temperature Range	-65 to +175

Description

This FDB6644 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs FDB6644 feature faster switching and lower gate charge than other MOSFETs with comparable RDS_(ON) specifications.

The result is a MOSFET FDB6644 that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.