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FDB5800

MOSFET 60V N-Ch Logic PowerTrench MOSFET

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SeekIC No. : 00148031 Detail

FDB5800: MOSFET 60V N-Ch Logic PowerTrench MOSFET

FDB5800 Data Sheet

floor Price/Ceiling Price

US $ .9~1.27 / Piece | Get Latest Price
Part Number:
FDB5800
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

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  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.27
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  • $.9
  • Processing time
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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 80 A
Package / Case : TO-263
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.0055 Ohms at 10 V


Features:

*rDS(ON)  = 5.5m? (Typ.), VGS = 5V, ID  = 80A 
*High performance trench technology for extermely low Rdson
*Low Gate Charge
*High power and current handling capability
*Qualified to AEC Q101
*RoHS Compliant

 




Application

Motor/ Body Load Control
ABS Systems
Power Train Management
Injection Systems
DC-DC Converters and Off-Line UPS


Specifications

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 60 V
VGS
Gate to Source Voltage
±20		 V
ID
 Drain Current
Continuous (TC < 102, VGS = 10V)
80 A
Continuous (TC < 90, VGS = 5V)
80 A
Continuous (Tamb = 25, VGS = 10V, with RJA = 43/W)  14 A
Pulsed
Figure 4		 A
EAS Single Pulse Avalanche Energy (Note 1) 652 mJ
PD
 Power dissipation 242 W
Derate above 25 1.61 W/
TJ , TSTG
 		 Operating and Storage Temperature -55 to 175



Parameters:

Technical/Catalog InformationFDB5800
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs6 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 6625pF @ 15V
Power - Max242W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs135nC @ 10V
Package / CaseD&sup2;Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB5800
FDB5800
FDB5800TR ND
FDB5800TRND
FDB5800TR



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