FDB4030L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 20 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.055 Ohms
Package / Case : TO-263AB


Features:

20 A, 30 V. R _DS(ON)= 0.035 W @  V_GS=10 V                   
                     R _DS(ON)= 0.055 W @ V_GS=4.5V
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High density cell design for extremely low R _DS(ON)
175°C maximum junction temperature rating.


Specifications

Symbol	Parameter	FDP4030L	FDB4030L	Units
VDSS	Drain-Source Voltage	80		V
VGSS	Gate-Source Voltage	± 20		V
ID	Drain Current - Continuous    (Note 1)                        - Pulsed        (Note 1)	3.0		A
		60
PD	Total Power Dissipation @ TC = 25°C                                 Derate above 25°C	37.5		W
		0.25		W/°C
TJ, Tstg	Operating and Storage Temperature Range	-65 to 175		°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	275		°C

Description

These FDB4030L N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.