FDB28N30TM, US $ .74-1.04 , Fairchild Semiconductor, FDB28N30TM DataSheet download, circuit diagram from SeekIC.com

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FDB28N30TM: MOSFET 300V N-Channel

FDB28N30TM Data Sheet

US $ .74~1.04 / Piece | Get Latest Price

Part Number:: FDB28N30TM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	300 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	28 A
Resistance Drain-Source RDS (on) :	0.108 Ohms at 10 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 28 A
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.108 Ohms at 10 V

Parameters:

Technical/Catalog Information	FDB28N30TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	28A
Rds On (Max) @ Id, Vgs	129 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	2250pF @ 25V
Power - Max	250W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	50nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB28N30TM FDB28N30TM FDB28N30TMTR ND FDB28N30TMTRND FDB28N30TMTR

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FDB28N30TM

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