FDB2670

MOSFET 200V N-Channel Pwr Trench

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FDB2670 Picture
SeekIC No. : 00161493 Detail

FDB2670: MOSFET 200V N-Channel Pwr Trench

floor Price/Ceiling Price

Part Number:
FDB2670
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.13 Ohms at 10 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.13 Ohms at 10 V
Package / Case : TO-263AB


Features:

*  19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V
*  Low gate charge (27 nC typical)
* Fast switching speed
*  High performance trench technology for extremely low RDS(ON)
*  High power and current handling capability



Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 200 V
VGSS
Gate-Source Voltage
± 20 V
ID Drain Current Continuous (Note 1)
                      Pulsed (Note 1)
19 A
A
40
PD Total Power Dissipation @ TC = 25
Derate above 25
93 W
0.63 W°/C
dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns
TJ, TSTG
Operating and Storage Junction Temperature Range
65 to +175



Description

  This FDB2670 N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application.  Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit.

  These MOSFETs FDB2670 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

  The result is a MOSFET FDB2670 that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDB2670
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs130 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1320pF @ 100V
Power - Max93W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs38nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDB2670
FDB2670



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