MOSFET 200V N-Channel Pwr Trench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 19 A | ||
Resistance Drain-Source RDS (on) : | 0.13 Ohms at 10 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263AB | Packaging : | Reel |
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | 200 | V |
VGSS | Gate-Source Voltage |
± 20 | V |
ID | Drain Current Continuous (Note 1) Pulsed (Note 1) |
19 | A A |
40 | |||
PD | Total Power Dissipation @ TC = 25 Derate above 25 |
93 | W |
0.63 | W°/C | ||
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 3.2 | V/ns |
TJ, TSTG | Operating and Storage Junction Temperature Range |
65 to +175 |
This FDB2670 N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit.
These MOSFETs FDB2670 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET FDB2670 that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Technical/Catalog Information | FDB2670 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 19A |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 1320pF @ 100V |
Power - Max | 93W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 38nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDB2670 FDB2670 |