FDB2570

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 22 A
Package / Case : TO-263AB
Resistance Drain-Source RDS (on) : 0.08 Ohms at 10 V


Features:

* 22 A, 150 V. R_DS(ON) = 80 m @ V_GS = 10 V
R_DS(ON) = 90 m @ V_GS = 6 V
* Low gate charge (40nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* 175°C maximum junction temperature rating




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	150	V
VGSS	Gate-Source Voltage	± 20	V
ID	Drain Current Continuous (Note 1) Pulsed (Note 1)	22	A A
		50
PD	Total Power Dissipation @ TC = 25 Derate above 25	93	W
		0.63	W°/C
TJ, TSTG	Operating and Storage Junction Temperature Range	65 to +175

Description

The FDB2570 is a 150V N-channel PowerTrench MOSFET.This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application.Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit.This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Features of the FDB2570 are:(1)22 A,150 V. RDS(ON) = 80m @ VGS =10 V,RDS(ON) = 90m @ VGS =6 V; (2)low gate charge (40nC typical); (3)high performance trench technology for extremely low RDS(ON); (4)fast switching speed;(5)175 maximum junction temperature rating.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

The absolute maximum ratings of the FDB2570 can be summarized as:(1)drain-source voltage:150 V;(2)storage temperature range:-65 to 175;(3)drain current:50A;(4)operating junction temperature:-65 to 175;(5)power dissipation:93W;(6)gate-source voltage:±20V.The result is a MOSFET that is easy and safer to drive(even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

Parameters:

Technical/Catalog Information	FDB2570
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	22A
Rds On (Max) @ Id, Vgs	80 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	1911pF @ 75V
Power - Max	93W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDB2570 FDB2570