MOSFET 100V N-Channel PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 164 A | ||
Resistance Drain-Source RDS (on) : | 0.0047 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
---|---|---|---|---|---|---|---|---|
FDB047N10 | Full Production | RoHS Compliant | $4.34 | TO-263(D2PAK) | 3 | TAPE REEL | TS2A | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FDB Line 3: 047N10 |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FDB047N10 is available. Click here for more information . |
This FDB047N10 N-Channel MOSFET is producedusing Fairchild Semiconductor?sadvance PowerTrench process that has been especiallytailored to minimize the on-state resistance and yet maintainsuperior switching performance.
Technical/Catalog Information | FDB047N10 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 75A, 10V |
Input Capacitance (Ciss) @ Vds | 15265pF @ 25V |
Power - Max | 375W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 210nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDB047N10 FDB047N10 FDB047N10CT ND FDB047N10CTND FDB047N10CT |