Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 34 A
Drain-Source Breakdown Voltage
: 300 V
Resistance Drain-Source RDS (on)
: 0.056 Ohms
Package / Case
: TO-3PF
Features: • 34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 80 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FDAF59N30 |
Unit |
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL |
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed (Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds |
300
34
20
136
±30
1734
34
16.1
4.5
161
1.3
-55 to +150
300 |
V
AA
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C |
DescriptionThese FDAF59N30 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDAF59N30 are well suited for high efficient switched mode power supplies and active power factor correction.
Parameters: | Technical/Catalog Information | FDAF59N30 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25° C | 34A |
| Rds On (Max) @ Id, Vgs | 56 mOhm @ 17A, 10V |
| Input Capacitance (Ciss) @ Vds | 4670pF @ 25V |
| Power - Max | 161W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 100nC @ 10V |
| Package / Case | TO-3PF |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDAF59N30
FDAF59N30
|
FDAF59N30 Data Sheet
