FD200H02A5B

The FD200H02A5B has some electrical characteristics (wafer form).When parameter is VFM maximum forward voltage,the limits is 1.13,the units is V,the test conditions is TJ=25, IF=150A (Pow/Rtab).When parameter is VFM maximum forward voltage,the limits is 1.08,the units is V,the test conditions is TJ=25, IF=60A (TO-247).When parameter is VRRM mimunum reverse breakdown voltage,the limits is 200,the units is V,the test conditions is TJ=25, IRRM=100A.When parameter is IRM Max. reverse leakage current,the limits is 50,the units is A,the test conditions is TJ=25, VRRM=200V.When parameter is trr Typ. reverse recovery time,the limits is 35,the units is ns,the test conditions is IF=1A,diF/dt=100A/s, VR=30 V.

The FD200H02A5B has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag(1 KA - 2 KA - 3 KA).The nominal front metal composition,thickness is 99% Al,1% Si (3 microns).The chip dimensions is 0.200" x 0.200" (see drawing).The reject ink dot size is 0.25 mm diameter minimum.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.

Data and specifications subject to change without notice.This product has been designed and qualified for Industrial Level.Qualification Standards can be found on IR's Web site.At present there is not too much information about this model.If you are willing to find more  about FD200H02A5B,please pay attention to our web! We will promptly update the relevant  information.