FCU7N60TU

MOSFET 600V N-Channel MOSFET

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SeekIC No. : 00159803 Detail

FCU7N60TU: MOSFET 600V N-Channel MOSFET

floor Price/Ceiling Price

Part Number:
FCU7N60TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 0.53 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.53 Ohms
Continuous Drain Current : 7 A
Package / Case : IPAK


Parameters:

Technical/Catalog InformationFCU7N60TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs600 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds 920pF @ 25V
Power - Max83W
PackagingTube
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FCU7N60TU
FCU7N60TU



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