Features: • 0.5 MICRON CMOS Technology• High-speed, low-power CMOS replacement for ABT functions• Typical tSK(o) (Output Skew) < 250ps• Low input and output leakage 1A (max.)• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R ...
FCT1637CT: Features: • 0.5 MICRON CMOS Technology• High-speed, low-power CMOS replacement for ABT functions• Typical tSK(o) (Output Skew) < 250ps• Low input and output leakage 1A (ma...
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Symbol | Description | Max | Unit |
VTERM(2) | Terminal Voltage with Respect to GND | 0.5 to 7 | V |
VTERM(3) | Terminal Voltage with Respect to GND | 0.5 to VCC+0.5 | V |
TSTG | Storage Temperature | 65 to +150 | |
TSTG | DC Output Current | 60 to +120 | mA |
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. All device terminals except FCT162XXX Output and I/O terminals.
3. Outputs and I/O terminals for FCT162XXX.
The FCT16373T 16-bit transparent D-type latch is built using advanced dual metal CMOS technology. These high-speed, low-power latches are ideal for temporary storage of data. They can be used for implementing memory address latches, I/O ports, and bus drivers. The Output Enable and Latch Enable controls are organized to operate each device as two 8-bit latches, or one 16-bit latch.
Flow-through organization of signal pins simplifies layout. All inputs are designed with hysteresis for improved noise margin.
The FCT16373T is ideally suited for driving high-capacitance loads and lowimpedance backplanes. The output buffers are designed with power off disable capability to allow "live insertion" of boards when used as backplane drivers.