FCPF20N60

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.19 Ohms


Features:

• 650V @T_J = 150°C
• Typ. RDS(on) = 0.15Ω
• Ultra low gate charge (typ. Qg = 75nC)
• Low effective output capacitance (typ. Coss.eff = 165pF)
• 100% avalanche tested


Specifications

Symbol	Parameter	FCP20N60	FCPF20N60	Units
VDSS	Drain-Source Voltage	600		V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	20 12.5	20* 12.5 *	A A
IDM	Drain Current - Pulsed (Note 1)	60	60 *	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	690		mJ
IAR	Avalanche Current (Note 1)	20		A
EAR	Repetitive Avalanche Energy (Note 1)	20.8		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
PD	Power Dissipation (TC = 25°C)                    - Derate above 25°C	208 1.67	39 0.3	W W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I_AS = 10A, V_DD = 50V, R_G = 25Ω, Starting T_J = 25°C
3. I_SD 20A, di/dt 200A/µs, VDD BVDSS, Starting T_J = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics


Description

FCPF20N60 SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This FCPF20N60 advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Parameters:

Technical/Catalog Information	FCPF20N60
Vendor	Fairchild Semiconductor
Category	Transistors, FETs, IGBTs
Mounting Type	Through Hole
Package Name	TO-220 FullPAK
FET Type	N-Channel
Drain to Source Voltage (Vdss)	600.0 V [Nom]
Voltage Gate to Source (Vgs)	30.0 V [Max]
Continuous Drain Current (Id)	20.00 A [Nom]
Rds On (Max) @ Id, Vgs	190 mOhms @ 10A, 10V
Rds On (Typ) @ Id, Vgs	150 mOhms @ 10A, 10V
Input Capacitance (Ciss)	3080.0 pF @ 25.0 V
Gate Charge (Qg)	98.00 nC @ 10.0 V
Power Dissipation	39.000 W [Max]
Packaging	Tube
Protection Diode(s)	Drain to Source
Delay Time On	62.00 ns [Typ]
Delay Time Off	230.00 ns [Typ]
Rise Time	140.000 ns [Typ]
Fall Time	65.000 ns [Typ]
Vgs Min.	3.00 V @ 250.0 A
Vgs Max.	5.00 V @ 250.0 A
Drain Peak Current (Idm)	60.000 A [Nom]
Operating Junction Temperature	-55 °C [Min]
Operating Junction Temperature	150 °C [Max]
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FCPF20N60 FCPF20N60