Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Resistance Drain-Source RDS (on)
: 0.53 Ohms
Continuous Drain Current
: 7 A
Features: • 650V @TJ = 150°C
• Typ. RDS(on) = 0.53Ω
• Ultra low gate charge (typ. Qg = 25nC)
• Low effective output capacitance (typ. Coss.eff = 60pF)
• 100% avalanche testedSpecifications
|
Symbol |
Parameter |
FCP11N60F |
FCPF11N60F |
Units |
|
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL |
Drain-Source Voltage
|
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
|
600 |
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
|
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
7
4.4
21 |
7*
4.4*
21* |
Drain Current - Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt |
± 30
230
7
8.3
4.5 |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
83
0.67 |
31
0.25 |
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds |
-55 to +150
300 |
DescriptionFCP7N60 SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This FCP7N60 advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Parameters: | Technical/Catalog Information | FCP7N60 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 7A |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 3.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 920pF @ 25V |
| Power - Max | 83W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FCP7N60
FCP7N60
|
FCP7N60 Data Sheet
