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FCD5N60TM

MOSFET 650V SUPERFET

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SeekIC No. : 00159597 Detail

FCD5N60TM: MOSFET 650V SUPERFET

FCD5N60TM Data Sheet

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Part Number:
FCD5N60TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4.6 A
Resistance Drain-Source RDS (on) : 0.81 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 4.6 A
Resistance Drain-Source RDS (on) : 0.81 Ohms


Parameters:

Technical/Catalog InformationFCD5N60TM
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C4.6A
Rds On (Max) @ Id, Vgs950 mOhm @ 2.3A, 10V
Input Capacitance (Ciss) @ Vds 600pF @ 25V
Power - Max54W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FCD5N60TM
FCD5N60TM
FCD5N60TMCT ND
FCD5N60TMCTND
FCD5N60TMCT



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