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FCD4N60TM_WS

MOSFET 600V 3.9A N-Channel

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SeekIC No. : 00163870 Detail

FCD4N60TM_WS: MOSFET 600V 3.9A N-Channel

FCD4N60TM_WS Data Sheet

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Part Number:
FCD4N60TM_WS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.9 A
Resistance Drain-Source RDS (on) : 1 Ohm Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 1 Ohm
Continuous Drain Current : 3.9 A


Parameters:

Technical/Catalog InformationFCD4N60TM_WS
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C3.9A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 540pF @ 25V
Power - Max50W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs16.6nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FCD4N60TM_WS
FCD4N60TM_WS
FCD4N60TM_WSCT ND
FCD4N60TM_WSCTND
FCD4N60TM_WSCT



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