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FCB11N60FTM

MOSFET 600V N-Channel MOSFET

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SeekIC No. : 00163872 Detail

FCB11N60FTM: MOSFET 600V N-Channel MOSFET

FCB11N60FTM Data Sheet

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Part Number:
FCB11N60FTM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.38 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.38 Ohms


Parameters:

Technical/Catalog InformationFCB11N60FTM
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs380 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 1490pF @ 25V
Power - Max125W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs52nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FCB11N60FTM
FCB11N60FTM
FCB11N60FTMDKR ND
FCB11N60FTMDKRND
FCB11N60FTMDKR



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