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FCA16N60_F109

MOSFET 600V N-CH MOSFET SUPERFET

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SeekIC No. : 00162839 Detail

FCA16N60_F109: MOSFET 600V N-CH MOSFET SUPERFET

FCA16N60_F109 Data Sheet

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Part Number:
FCA16N60_F109
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.22 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 16 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.22 Ohms
Package / Case : TO-3P


Parameters:

Technical/Catalog InformationFCA16N60_F109
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs260 mOhm @ 8A, 10V
Input Capacitance (Ciss) @ Vds 2250pF @ 25V
Power - Max167W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FCA16N60_F109
FCA16N60_F109



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