Features: *Composite type with 3 diodes contained in the CPpackage currently in use, improving the mountingefficiency greatly.*The FC903 is formed with 3 chips, each beingequivalent to the DSB010, placed in one package.High switching speed.Specifications Parameter Symbol Conditions ...
FC903: Features: *Composite type with 3 diodes contained in the CPpackage currently in use, improving the mountingefficiency greatly.*The FC903 is formed with 3 chips, each beingequivalent to the DSB010, p...
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Diodes (General Purpose, Power, Switching) TRIPLE PARALLEL SWITCH DI
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Peak Reverse Voltage |
VRM |
85 |
V | |
Reverse Voltage |
VR |
80 |
V | |
Peak Forward Current |
IFM |
10ms* |
300 |
mA |
Average Rectified Current |
IO |
100 |
mA | |
Surge Forward Current |
IFsM |
1s |
4 |
A |
Allowable Power Dissipation |
P |
Total value |
300 |
mW |
Junction Temperature |
Tj |
125 |
||
Storage Temperature |
Tstg |
55 to+125 |
Absolute maximum ratings | |
---|---|
VR [V] | 80 |
IO [A] | 0.1 |
IFM [A] | 0.3 |
Electrical characteristics | |
---|---|
VF(1) max [V] | 0.60* |
IF [mA] | 1 |
VF(2) max [V] | 0.72* |
IF [mA] | 10 |
VF(3) max [V] | 1.2 |
IF [mA] | 100 |
IR(1) max [µA] | 0.1 |
VR [V] | 30 |
IR(2) max [µA] | 0.5 |
VR [V] | 80 |
trr max [ns] | 4 |
IF [A] | 0.01 |
VR [V] | 6 |
RL [] | 50 |
Irr [Irp] | 0.1 |