Features: · Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one package, facilitating high-density mounting.Specifications Parameter Symbol Conditions Ratings Unit [TR1] Collector-to-Base Voltage VCBO 20 V Collector-to-E...
FC155: Features: · Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one package, facilitating high-density mounting.Specifications Parameter Symbol ...
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Parameter | Symbol | Conditions | Ratings | Unit |
[TR1] | ||||
Collector-to-Base Voltage | VCBO | 20 | V | |
Collector-to-Emitter Voltage | VCEO | 15 | V | |
Emitter-to-Base Voltage | VEBO | 5 | V | |
Collector Current | IC | 500 | mA | |
Collector Current (Pulse) | ICP | 1 | A | |
Base Current | IB | 5 | mA | |
Collector Dissipation | PC | 1 unit | 200 | mW |
Total Dissipation | PT | 300 | mW | |
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C | |
[TR2] | ||||
Collector-to-Base Voltage | VCBO | 20 | V | |
Collector-to-Emitter Voltage | VCEO | 15 | V | |
Emitter-to-Base Voltage | VEBO | 5 | V | |
Collector Current | IC | 500 | mA | |
Collector Current (Pulse) | ICP | 1 | A | |
Base Current | IB | 100 | mA | |
Collector Dissipation | PC | 1 unit | 200 | mW |
Total Dissipation | PT | 300 | mW | |
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C |