Features: ` Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.` The FC149 is formed with two chips, being equivalent to the 2SA1813, placed in one package.` Adoption of FBET process.` High DC current gain (hFE=500 to 1200).` H...
FC149: Features: ` Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.` The FC149 is formed with two chips, being equivalent to the 2S...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage |
VCBO | -30 | V | |
Collector-to-Emitter Voltage |
VCEO | -25 | V | |
Emitter-to-Base Voltage | VEBO | -15 | V | |
Collector Current |
IC | -150 | mA | |
Collector Current (Pulse) | ICP | -300 | mA | |
Base Current |
IB | -30 | mA | |
Collector Dissipation | PC | 1 unit | 200 | mW |
Total Power Dissipation | PT | 300 | mW | |
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C |