Features: · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.· The FC139 is formed with two chips, being equivalent to the 2SC3689, placed in one package.· Adoption of FBET process.· High DC current gain (hFE=800 to 3200).· H...
FC139: Features: · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.· The FC139 is formed with two chips, being equivalent to the 2S...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage |
VCBO | 60 | V | |
Collector-to-Emitter Voltage |
VCEO | 50 | V | |
Emitter-to-Base Voltage | VEBO | 15 | V | |
Collector Current |
IC | 100 | mA | |
Collector Current (Pulse) | ICP | 200 | mA | |
Base Current |
IB | 20 | mA | |
Collector Dissipation | PC | 1 unit | 200 | mW |
Total Power Dissipation | PT | 300 | mW | |
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C |