Features: * High case dielectric strength* High surge current capability* High reliability* Low reverse current* Low forward voltage drop* Fast switching for high efficiency* Ideal for printed circuit boardSpecifications RATING SYMBOL FBR1000 FBR1001 FBR1002 FBR1004 FBR1006 FBR1008 FB...
FBR1010: Features: * High case dielectric strength* High surge current capability* High reliability* Low reverse current* Low forward voltage drop* Fast switching for high efficiency* Ideal for printed circu...
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RATING | SYMBOL | FBR 1000 |
FBR 1001 |
FBR 1002 |
FBR 1004 |
FBR 1006 |
FBR 1008 |
FBR 1010 |
UNIT |
Maximum Recurrent Peak Reverse Voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum RMS Voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | Volts |
Maximum DC Blocking Voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | Volts |
Maximum Average Forward Current Tc = 55 °C | IF(AV) | 10 |
Amps. | ||||||
Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) |
IFSM | 250 | Amps. | ||||||
Current Squared Time at t < 8.3 ms. | I2t | 160 | A2S | ||||||
Maximum Forward Voltage drop per Diode at IF = 5.0 Amps | IR | 10 | mA | ||||||
Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C |
IR(H) | 200 | mA | ||||||
Maximum Reverse Recovery Time (Note 1) | Trr | 150 | 250 | 500 | ns | ||||
Typical Thermal Resistance per diode (Note 2) | RqJC | 2.5 | °C/W | ||||||
Operating Junction Temperature Range | TJ | - 50 to + 150 | °C | ||||||
Storage Temperature Range | TSTG | - 50 to + 150 | °C |