Features: * Glass passivated chip* High case dielectric strength* High surge current capability* High reliability* Low reverse current* Low forward voltage drop* Fast switching for high efficiency* Ideal for printed circuit boardSpecifications RATING SYMBOL FB40-C1000G FB80-C1000G FB125-C...
FB40 - FB380: Features: * Glass passivated chip* High case dielectric strength* High surge current capability* High reliability* Low reverse current* Low forward voltage drop* Fast switching for high efficiency* ...
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Features: * Glass passivated chip* High case dielectric strength* High surge current capability* H...
RATING | SYMBOL | FB40-C 1000G |
FB80-C 1000G |
FB125-C 1000G |
FB250-C 1000G |
FB380-C 1000G |
UNIT |
Maximum Recurrent Peak Reverse Voltage | VRRM | 100 | 200 | 300 | 600 | 900 | Volts |
Maximum RMS Input Voltage R+C -Load | VRMS | 40 | 80 | 125 | 250 | 380 | Volts |
Maximum RMS Input Voltage R+C -Load | VDC | 100 | 200 | 300 | 600 | 900 | Volts |
Maximum Average Forward Current For Free Air Operation at Tc = 45°C R+L -Load C -Load |
IF(AV) | 1.2 1.0 |
Amps. | ||||
Peak Forward Surge Current Single half sine wave on rated load (JEDEC Method) at TJ = 125 °C |
IFSM | 30 | Amps. | ||||
Rating for fusing at TJ = 125°C ( t < 100 ms. | I2t | 10 | A2S | ||||
Maximum Series Resistor C-Load VRMS = ± 10% | Rt | 1.0 | 2.0 | 4.0 | 8.0 | 12.0 | |
Maximum load Capacitance + 50% 10% |
CL | 5000 | 2500 | 1000 | 500 | 200 | F |
Maximum Forward Voltage per Diode at IF = 1.0 Amps. | VF | 1.3 | Volts | ||||
Maximum Reverse Current at Rated Repetitive Peak Voltage per Diode |
IR | 10 | A | ||||
Maximum Reverse Recovery Time (Note 1) | Trr | 150 | 250 | 500 | ns | ||
Typical Thermal Resistance (Note 2) | RqJA | 36 | °C/W | ||||
Operating Junction Temperature Range | TJ | - 50 to + 125 | °C | ||||
Storage Temperature Range | TSTG | - 50 to + 125 | °C |