Manufacturer: Vishay Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Input Capacitance (Ciss) @ Vds: 10700pF @ 25V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Supplier Device Package: SOT-227B
Current - Continuous Drain (Id) @ 25° C: 180A
Power - Max: 480W
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 380nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 108A, 10V
Features: Fully Isolated Package
Easy to Use and Parallel
Very Low On-Resistance
Dynamic dv/dt Rating
Fully Avalanche Rated
Simple Drive Requirements
Low Drain to Case Capacitance
Low Internal InductanceSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
180 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
120 |
| IDM |
Pulsed Drain Current |
720 |
| PD @TC = 25°C |
Power Dissipation |
480 |
W |
| |
Linear Derating Factor |
2.7 |
W/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy |
700 |
MJ |
| IAR |
Avalanche Current |
180 |
A |
| EAR |
Repetitive Avalanche Energy |
48 |
MJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.7 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 150 |
°C |
| VISO |
Insulation Withstand Voltage (AC-RMS) |
2.5 |
kV |
| |
Mounting torque, M4 srew |
1.3 |
N•m |
DescriptionFifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT- 227 package contribute to its universal acceptance throughout the industry.
FB180SA10 Data Sheet
