Features: • Can source and sink up to 2A continous, 3A peak• No heatsink required• Integrated Power MOSFETs• Generates termination voltages for DDR SDRAM• VREF input available for external voltage divider• Separate voltages for VCCQ and PVDD• Buffered VREF...
FAN6555: Features: • Can source and sink up to 2A continous, 3A peak• No heatsink required• Integrated Power MOSFETs• Generates termination voltages for DDR SDRAM• VREF input av...
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Parameter | Min | Max | Unit |
PVDD | 4.5 | V | |
Voltage on Any Other Pin | GND 0.3 | VIN+ 0.3 | V |
Average Switch Current (IAVG) | 2.0 | A | |
Junction Temperature | 150 | °C | |
Storage Temperature Range | -65 | 150 | °C |
Lead Temperature (Soldering, 10 sec) | 300 | °C | |
Thermal Resistance: Junction to Case (JC) Junction to Ambient (JA) |
30 | °C/W | |
88 | |||
Output Current, Source or Sink (peak) | 3.0 | A |
The FAN6555 switching regulator is designed to convert voltage supplies ranging from 2.3V to 4V into a desired output voltage or termination voltage for DDR SDRAM memory. The FAN6555 can be implemented to produce regulated output voltages in two different modes. In the default mode, when the VREF pin is open, the FAN6555 output voltage is 50% of the voltage applied to VCCQ . The FAN6555 can also be used to produce various user-defined voltages by forcing a voltage on the VREFIN pin. In this case, the output voltage follows the input VREFIN voltage. The switching regulator is capable of sourcing or sinking up to 2A of current while regulating an output VTT voltage to within 3% or less. Transient output currents of ±3A can also be accommodated.
The FAN6555 can also be used in conjunction with series termination resisitors to provide an excellent voltage source for active termination schemes of high speed transmission lines as those seen in high speed memory buses and distributed backplane designs.