Features: ` Low current consumption by CMOS process ` Stand-by : 3A(max), Start-up : 30A(max), Operating : 4mA(typ)` Good regulation of PFC output voltage from no-load to full-load ` Drive circuit for connecting a power MOSFET(IOUT= ±1.5A)` Pulse-by-pulse overcurrent and overvoltage limiting funct...
FA5502P: Features: ` Low current consumption by CMOS process ` Stand-by : 3A(max), Start-up : 30A(max), Operating : 4mA(typ)` Good regulation of PFC output voltage from no-load to full-load ` Drive circuit f...
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` Low current consumption by CMOS process
` Stand-by : 3A(max), Start-up : 30A(max), Operating : 4mA(typ)
` Good regulation of PFC output voltage from no-load to full-load
` Drive circuit for connecting a power MOSFET(IOUT= ±1.5A)
` Pulse-by-pulse overcurrent and overvoltage limiting function
` ±2% accuracy reference voltage for setting DC output and overvoltage protection
` Output ON/OFF control function by external signal
` External synchronizing input pin for synchronous operation with other circuits
` Undervoltage lockout function (ON:16.5V, OFF:8.9V)
`16-pin package (DIP/SOP)
Item |
Symbol |
Rating |
Unit | ||
Supply Voltage |
VC pin |
VC |
VCC |
V | |
VCC pin Low impedance source (Icc>15mA) |
VCC1 |
30 |
V | ||
VCC pin Internal zener clamp voltage (Icc<15mA) |
VCC2 |
Self Limiting |
V | ||
Output peak current |
IOUT |
±1.5 |
A | ||
SYNC VIN- VDET ang OVP pins Input voltage |
VSYNC VVIN- VVDET VOVP |
-0.3 to 5.0 |
V | ||
IDET pin input voltage |
VIDET |
-10 to 5.0 |
V | ||
ON/OFF pin input voltage |
VON/OFF |
-0.3 to Vcc |
V | ||
REF pin source current |
IREF |
-10 |
mA | ||
Power dissipation (Ta=25) |
DIP-16 |
Pd |
850 |
mW | |
SOP-16 |
650 |
mW | |||
Ambiance temperature |
Ta |
-30 to +105 |
|||
Maximum junction temperature |
Tj |
+150 |
|||
Storage temperature |
Tstg |
-40 to +150 |
Note) VC and ON/OFF pins voltage must be less than or equal to VCC pin voltage in all the conditions.
Peak current at OUT pin may flow to rated value neither according to supply voltage nor temperature conditions.
FA5502P/M is a control IC for a power factor correction system. This IC uses a CMOS device with high dielectric strength (30V) to implement low power consumption. This IC uses the average current control system to ensure stable operation. With this system, a power factor of 99% or better can be achieved.