Features: • Uses a newly developed CMOS process with high dielectric strength (30V) for implementing low power consumption• Standby current of 2µA or less (at Vcc=14V), and operating current of 1.9mA (typ.)• Automatically reduces the oscillation frequency to suppressloss of...
FA3647N: Features: • Uses a newly developed CMOS process with high dielectric strength (30V) for implementing low power consumption• Standby current of 2µA or less (at Vcc=14V), and operati...
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Item | Symbol | Test condition | Rating | Unit |
Supply voltage | VCC1 | Low impedance source (Icc >15mA) | 30 | V |
VCC2 | Internal ZD clamp (Icc < 15mA) | Self limiting | V | |
Output peak current | IOL | Sink current | +1.0 | A |
IOH | Source current | -0.5 | A | |
FB pin input voltage | VFB | 0.3 to 5.0 | V | |
REF pin output current | IREF | 10 | mA | |
IS pin input voltage | VIS | 0.3 to 5.0 | V | |
CS pin input current | ICS | 2.0 | mA | |
Total power dissipation | Pd | at Ta =25 DIP SOP |
800 *1 400 *2 |
mW |
Operating temperature | Topr | 30 to +85 | ||
Junction temperature | Tj | 125 | ||
Storage temperature | Tstg | 40 to +150 |