F49L040A

The F49L040A is a 4 Megabit, 3V only CMOS Flash memory device organized as 512K bytes of 8 bits. This device is packaged in standard 32-pin TSOPI and 32-pin PLCC. It is designed to be programmed and erased both in system and can in standard EPROM programmers.

With access times of 70 ns and 90 ns, the F49L040A allows the operation of high-speed microprocessors. The device has separate chip enable CE , write enable WE  , and output enable OE controls. EFST's memory devices reliably store memory data even after 100,000 program and erase cycles.

The F49L040A is entirely pin and command set compatible with the JEDEC standard for 4 Megabit Flash memory devices. Commands are written to the command register using standard microprocessor write timings.

The F49L040A features a sector erase architecture. The device memory array is divided into eight 64 Kbytes. Sectors can be erased individually or in groups without affecting the data in other sectors. Multiple-sector erase and whole chip erase capabilities provide the flexibility to revise the data in the device.

The sector protect/unprotect feature disables both program and erase operations in any combination of the sectors of the memory. This can be achieved in-system or via programming equipment.

A low VCC detector inhibits write operations on loss of power. End of program or erase is detected by the Data  olling of DQ7, or by the Toggle Bit I feature on DQ6. Once the program or erase cycle has been successfully completed, the device internally resets to the Read mode.