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F3002

Specifications TotalDevice Dissipation Junction toCase Thermal Resistance MaximumJunction Temperature StorageTemperature DC DrainCurrent Drain toGate Voltage Drain toSource Voltage Gate toSource Voltage 500Watts 0.35/W 200 -65 to 150 36 A 70V 70V 30VDescri...

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SeekIC No. : 004340037 Detail

F3002: Specifications TotalDevice Dissipation Junction toCase Thermal Resistance MaximumJunction Temperature StorageTemperature DC DrainCurrent Drain toGate Voltage Drain toSourc...

F3002 Data Sheet

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Part Number:
F3002
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/18

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Product Details

Description



Specifications

Total
Device

Dissipation

Junction to
Case Thermal

Resistance

 

Maximum
Junction

Temperature

 Storage
Temperature		 DC Drain
Current

Drain to
Gate

Voltage

Drain to
Source

Voltage

Gate to
Source

Voltage

500Watts 0.35/W 200 -65 to 150 36 A 70V 70V 30V



Description

Silicon VDMOS and LDMOS transistors F3002 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
Laser Driver and others.

"Polyfet"TM process F3002 features gold metal for greatly extended lifetime. Low output capacitance and high F tenhance broadband performance




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