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F29C51004B

Features: 512Kx8-bit OrganizationAddress Access Time: 70, 90, 120 nsSingle 5V 10% Power Supply Sector Erase Mode Operation16KB Boot Block (lockable)1K bytes per Sector, 512 Sectors Sector-Erase Cycle Time: 10ms (Max) Byte-Write Cycle Time: 20m s (Max)Minimum 10,000 Erase-Program CyclesLow power...

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SeekIC No. : 004340027 Detail

F29C51004B: Features: 512Kx8-bit OrganizationAddress Access Time: 70, 90, 120 nsSingle 5V 10% Power Supply Sector Erase Mode Operation16KB Boot Block (lockable)1K bytes per Sector, 512 Sectors Sector-Erase Cy...

F29C51004B Data Sheet

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Part Number:
F29C51004B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

512Kx8-bit Organization
Address Access Time: 70, 90, 120 ns
Single 5V   10% Power Supply
Sector Erase Mode Operation
16KB Boot Block (lockable)
1K bytes per Sector, 512 Sectors
    Sector-Erase Cycle Time: 10ms (Max)
    Byte-Write Cycle Time: 20m s (Max)
Minimum 10,000 Erase-Program Cycles
Low power dissipation 
    Active Read Current: 20mA (Typ)
   Active Program Current: 30mA (Typ)
   Standby Current: 50m A (Max)
Hardware Data Protection
Low VCC  Program Inhibit Below 3.5V
Self-timed write/erase operations with end-of-cy-
cle detection
   DATA Polling
   Toggle Bit
CMOS and TTL Interface
Available in two versions
   F29C51004T (Top Boot Block)
   F29C51004B (Bottom Boot Block)
Packages:
   32-pin Plastic DIP
   32-pin TSOP-I
   32-pin PLCC


Pinout

Connection Diagram


Specifications

Symbol

Parameter

Commercial

Industrial

Unit

VIN Input Voltage (input or I/O pins) -2 to +7 -2 to +7 V
VIN Input Voltage (A9 pin, OE) -2 to +13 -2 to +13 V
VCC
 Power Supply Voltage -0.5 to +5.5 -0.5 to +5.5 V
TSTG Storage Temerpature (Plastic) -65 to +125 -65 to +150 C
TOPR Operating Temperature 0 to +70 -40 to + 85 C
IOUT Short Circuit Current(2) 200 (Max.) 200 (Max.) mA



Description

The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention.

The F29C51004T/F29C51004B offers a combi-nation of: Boot Block with Sector Erase/Write Mode. The end of write/erase cycle is detected by DATA Polling of I/O7  or by the Toggle Bit I/O6 .

TheF29C51004T/F29C51004B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase.

Boot block architecture enables the device to boot from a protected sector located either at the top (F29C51004T) or the bottom (F29C51004B). All inputs and outputs are CMOS and TTL compatible.

The F29C51004T/F29C51004B is ideal for applications that require updatable code and data storage.




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