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F2212

PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 40Watts 4.2/W 200 -65 to 150 3.2A 50 V 50 V 30VDescriptionSilicon VDM...

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SeekIC No. : 004339971 Detail

F2212: PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gat...

F2212 Data Sheet

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Part Number:
F2212
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Pinout






Specifications

Total
Device
Dissipation		 Junction to
Case Thermal
Resistance		 Maximum
Junction
Temperature		 Storage
Temperature		 DC Drain
Current		 Drain to
Gate
Voltage		 Drain to
Source
Voltage		 Gate to
Source
Voltage
40Watts 4.2/W 200
-65 to 150		 3.2A 50 V 50 V 30V





Description

Silicon VDMOS and LDMOS transistors F2212 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet" TM process F2212 features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance






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