F2202

PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 30Watts 6/W 200 -65 to 150 1.6A 50 V 50 V 30VDescriptionSilicon VDMOS...

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F2202 Picture
SeekIC No. : 004339968 Detail

F2202: PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gat...

floor Price/Ceiling Price

Part Number:
F2202
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
30Watts 6/W 200
-65 to 150
1.6 A 50 V 50 V 30V



Description

Silicon VDMOS and LDMOS transistors F2202 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet" TM process F2202 features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance




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