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F2201

PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 20Watts 10/W 200 -65 to 150 0.8 A 50 V 50 V 30VDescriptionSilicon VDM...

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SeekIC No. : 004339966 Detail

F2201: PinoutSpecifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gat...

F2201 Data Sheet

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Part Number:
F2201
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Pinout

Connection Diagram


Specifications

Total
Device
Dissipation		 Junction to
Case Thermal
Resistance		 Maximum
Junction
Temperature		 Storage
Temperature		 DC Drain
Current		 Drain to
Gate
Voltage		 Drain to
Source
Voltage		 Gate to
Source
Voltage
20Watts 10/W 200
-65 to 150		 0.8 A 50 V 50 V 30V



Description

Silicon VDMOS and LDMOS transistors F2201 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
Laser Driver and others. 

 "Polyfet" TM    process F2201 features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance




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