F1427

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 440 Watts 0.4 /W 200 -65 to 150 10 A 150V 150V 30VDescriptionSilicon VDMOS a...

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SeekIC No. : 004339821 Detail

F1427: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...

floor Price/Ceiling Price

Part Number:
F1427
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
440 Watts 0.4 /W 200 -65 to 150 10 A 150V 150V 30V



Description

Silicon VDMOS and LDMOS transistors F1427 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet" TM process F1427 features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performance



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