F1220

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 90 Watts 1.95/W 200 -65 to 150 4A 50V 50V 30VDescriptionSilicon VDMOS and LDMO...

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SeekIC No. : 004339798 Detail

F1220: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...

floor Price/Ceiling Price

Part Number:
F1220
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
90 Watts 1.95/W 200 -65 to 150 4A 50V 50V 30V





Description

Silicon VDMOS and LDMOS transistors F1220 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"TM process F1220 features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance




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