Specifications TotalDevice Dissipation Junction toCase Thermal Resistance MaximumJunction Temperature StorageTemperature DC DrainCurrent Drain toGate Voltage Drain toSource Voltage Gate toSource Voltage 170 Watts 1.05/W 200 -65 to 150 8 A 70V 70V 30VDescriptionSilicon VDMOS ...
F1019: Specifications TotalDevice Dissipation Junction toCase Thermal Resistance MaximumJunction Temperature StorageTemperature DC DrainCurrent Drain toGate Voltage Drain toSource Voltage Gate ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
170 Watts | 1.05/W | 200 | -65 to 150 | 8 A | 70V | 70V | 30V |
Silicon VDMOS and LDMOS transistors F1019 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process atures gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performance t TM