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F1018

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 290 Watts 0.6/W 200 -65 to 150 12 A 70V 70V 30VDescriptionSilicon VDMOS and LD...

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SeekIC No. : 004339668 Detail

F1018: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...

F1018 Data Sheet

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Part Number:
F1018
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Specifications

Total
Device
Dissipation		 Junction to
Case Thermal
Resistance		 Maximum
Junction
Temperature		 Storage
Temperature		 DC Drain
Current		 Drain to
Gate
Voltage		 Drain to
Source
Voltage		 Gate to
Source
Voltage
290 Watts 0.6/W 200 -65 to 150 12 A 70V 70V 30V



Description

Silicon VDMOS and LDMOS transistors F1018 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"TM process F1018 features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance


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