ESM7545DV

DescriptionThe feature of ESM7545DV are as follows: (1)high current power bipolar module; (2)very low Rth junction case; (3)specified accidental overload areas; (4)ultrafast freewheeling diode; (5)isolated case; (6)easy to mount; (7)low internal parasitic inductance. The absolute maximum ratings ...

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SeekIC No. : 004338529 Detail

ESM7545DV: DescriptionThe feature of ESM7545DV are as follows: (1)high current power bipolar module; (2)very low Rth junction case; (3)specified accidental overload areas; (4)ultrafast freewheeling diode; (5)i...

floor Price/Ceiling Price

Part Number:
ESM7545DV
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Description

The feature of ESM7545DV are as follows: (1)high current power bipolar module; (2)very low Rth junction case; (3)specified accidental overload areas; (4)ultrafast freewheeling diode; (5)isolated case; (6)easy to mount; (7)low internal parasitic inductance.

The absolute maximum ratings of the ESM7545DV are: (1)collector-emltter voltage: 600V; (2)emltter-base voltage: 7V; (3)collector current: 75A; (4)collector peak current: 112A; (5)base current: 5A; (6)base peak current: 7A; (7)total dissipation at Tc = 25: 250W; (8)storage temperature: -55 to 150; (9)max. operating junction temperature: 150; (10)insulation withsland voltage: 2500V.

The following is about the electrical characteristics of ESM7545DV: (1)collector cut-off current: 2mA max at VOE = VOEV; (2)emltter cut-off current: 200mA at VEB = 5V; (3)collector-emltter sustaining voltage: 450V at IO = 0.2A, L= 25mH, Volamp = 450V; (4)DC current gain: 500 typical at IO = 75A, VCE = 5V; (5)collector-emltter saturation voltage: 1.3V typical at IO = 50A, IB = 1A; (6)baser-emltter saturation voltage: 2V typical at IO = 50A, IB = 1A; (7)collector-emltter dynamlo voltage: 6V typical and 9V max at Voo = 300V, Rc = 4, IB1 = 1.5A, Tj = 100; (8)storage time: 5s typical and 8s max at IC = 75A, VCC = 50V; (9)fall time: 0.8s typical and 1.5s max at IB1= 1.5A, IB2= -4A.




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