ES29LV800E

Storage Temperature
Plastic Packages ..............................................-65 to +150
Ambient Temperature
with Power Applied ..........................................-65 to +125
Voltage with Respect to Ground
Vcc (Note 1) .......................................................-0.5V to +4.0V
A9, OE# and RESET# (Note 2) ....................... .-0.5V to +12.5V
All other pins (Note 1) .................................-0.5V to Vcc + 0.5V
Output Short Circuit Current (Note 3) .................          200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, input or I/O pins may overshoot Vss to -2.0V for periods of up to 20ns. Maximum DC voltage on input or I/O pins is Vcc+0.5V. See Fig. 11. During voltage transition, input or I/O pins may overshoot to Vcc+2.0V for periods up to 20ns. See Fig. 11. 2. Minimum DC input voltage on pins A9, OE# and RESET# is -0.5V . During voltage transitions, A9, OE# and RESET# may overshoot Vss to -2.0V for periods of up to 20ns. See Fig. 11. Maximum DC input voltage on pin A9 is +12.5V which may overshoot to +14.0V for periods up to 20ns.

3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this datasheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.

The ES29LV800 is a 8 megabit, 3.0 volt-only flash memory device, organized as 1M x 8 bits (Byte mode) or 512K x 16 bits (Word mode) which  is config urable by BYTE#. Four boot sectors and fifteen main sectors are provided : 16Kbytes x 1, 8Kbytes x 2, 32Kbytes x 1 and 64Kbytes x 15. The device is manufactured with ESI's proprietary, high performance and highly reliable 0.18um CMOS flash technology. The device can be programmed or erased in-system with standard 3.0 Volt Vcc supply ( 2.7V-3.6V) and can also be programmed in standard EPROM programmers. The device offers minimum endurance of 100,000 program/erase cycles and more than 10 years of data retention.

The ES29LV800 offers access time as fast as 70ns or 90ns, allowing operation of high-speed microprocessors without wait states. Three separate control pins are provided to eliminate bus contention : chip enable (CE#), write enable (WE#) and output enable (OE#).

All program and erase operation are automatically and internally performed and controlled by embedded program/erase algorithms built in the device.

The ES29LV800 device automatically generates and times the necessary high-voltage pulses to be applied to the cells, performs the verification, and counts the number of sequences. Some status bits (DQ7, DQ6 and DQ5) read by data# polling or toggling between consecutive read cycles provide to the users the internal status of program/erase operation: whether it is successfully done or still being progressed.

The ES29LV800 is completely compatible with the JEDEC standard command set of single power supply Flash. Commands are written to the internal command register using standard write timings of microprocessor and data can be read out from the cell array in the device with the same way as used in other EPROM or flash devices.