ES29LV320D

* Single power supply operation  - 2.7V -3.6V for read, program and erase operations
*Sector Structure  - 8Kbyte x 8 boot sectors - 64Kbyte x 63 sectors  - 256byte security sector
* Top or Bottom boot block  - ES29LV320DT for Top boot block device - ES29LV320DB for Bottom boot block device

Storage Temperature
Plastic Packages ..................................................-65 ^oC to +150 ^oC
Ambient Temperature
with Power Applied ...............................................-65^o C to +125^oC
Voltage with Respect to Ground
V_cc (Note 1) ................................................................-0.5V to +4.0V
A9, OE#, RESET# and WP#/ACC (Note 2) ................-0.5V to +12.5V
All other pins (Note 1) .........................................-0.5V to Vcc + 0.5V
Output Short Circuit Current (Note 3) .................................. 200 mA

The ES29LV320 is a 32 megabit, 3.0 volt-only flash memory device, organized as 4M x 8 bits (Byte mode) or 2M x 16 bits (Word mode) which is config-urable by BYTE#. Eight boot sectors and sixty three main sectors with uniform size are provided :8Kbytes x 8 and 64Kbytes x 63. The device is man-ufactured with ESI's proprietary, high performance and highly reliable 0.18um CMOS flash technology.The device can be programmed or erased in-sys-tem with standard 3.0 Volt Vcc supply ( 2.7V-3.6V) and can also be programmed in standard EPROM programmers. The device offers  minimum endur-ance of 100,000 program/erase cycles and more than 10 years of data retention.

The ES29LV320 offers access time as fast as 80ns or 90ns, allowing operation of high-speed micropro-cessors without wait states. Three separate control pins are provided to eliminate bus contention : chip enable (CE#), write enable (WE#) and output enable (OE#).  All program and erase operation are automatically and internally performed and controlled by embed- ded program/erase algorithms built in the device. The device automatically generates and times the necessary high-voltage pulses to be applied to the cells, performs the verification, and counts the num-ber of sequences. Some status bits (DQ7, DQ6 and DQ5) read by data# polling or toggling between consecutive read cycles provide to the users the internal status of program/erase operation: whether it is successfully done or still being progressed.

All program and erase operation are automatically and internally performed and controlled by embed-ded program/erase algorithms built in the device. The device automatically generates and times the necessary high-voltage pulses to be applied to the cells, performs the verification, and counts the num-ber of sequences. Some status bits (DQ7, DQ6 and DQ5) read by data# polling or toggling between consecutive read cycles provide to the users the internal status of program/erase operation: whether it is successfully done or still being progressed.

In the ES29LV320D device, an extra security sector of 256 bytes is provided to customers.  This extra sector can be used for various purposes such as storing ESN (Electronic Serial Number) or customer's security codes.  Once after the extra sector is written, it can be permanently locked by the device manufacturer(factory-locked) or a customer(  customer-lock-able).  At the same time, a lock indicator bit (DQ7) is permanently set to a 1 if the part is factory- locked, or set to 0 if it is customer-lockable. Therefore, this lock indicator bit (DQ7) can be properly used to avoid that any customer-lockable part is used to replace a factory-locked part.  The extra security sector is an extra memory space for customers when it is used as a customer-lockable version.  So, it can be read and written like any other sectors. But it should be noted that the number of E/W(Erase and Write) cycles is limited to 300 times (maximum) only in the Security Sector.

Special services  ES29LV320D such as ESN and factory-lock are available to customers ( ESI's Special-Code ser-vice ) The ES29LV320 is completely compatible with the JEDEC standard command set of single power supply Flash. Commands are written to the internal command register using standard write timings of microprocessor and data can be read out from the cell array in the device with the same way as used in other EPROM or flash devices.