Features: * Ideal for surface mount pick and place application * Low profile package* Built-in strain relief * High surge capability* Glass passivated chip* Super fast recovery for high efficiency* High temperature soldering guaranteed:260 oC/10sec/at terminalSpecifications RATINGS SYMBOLS ...
ES1E: Features: * Ideal for surface mount pick and place application * Low profile package* Built-in strain relief * High surge capability* Glass passivated chip* Super fast recovery for high efficiency* ...
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* Ideal for surface mount pick and place application
* Low profile package
* Built-in strain relief
* High surge capability
* Glass passivated chip
* Super fast recovery for high efficiency
* High temperature soldering guaranteed:260 oC/10sec/at terminal
RATINGS | SYMBOLS | ES1A | ES1B | ES1C | ES1D | ES1E | ES1G | UNITS |
Maximum Repetitive Peak Reverse Voltage | VRRM | 50 | 100 | 150 | 200 | 300 | 400 | |
Maximum RMS Voltage | VRMS | 35 | 70 | 105 | 140 | 210 | 280 | Volts |
Maximum DC Blocking Voltage | VDC | 50 | 100 | 150 | 200 | 300 | 400 | Volts |
Maximum Average Forward Rectified Current (TL=110o C) |
IF(AV) | 1.0 | Volts | |||||
Peak Forward Surge Current (8.3ms single half sine-wave superimposed on rated load) |
IFSM | 30 | Amp | |||||
Maximum Instantaneous Forward Voltage (at rated forward current) |
VF | 0.95 | 1.25 | Amps | ||||
Maximum DC Reverse Current Ta=25o C (at rated DC blocking voltage)Ta=100o C |
IR | 5.0 200 |
Volts | |||||
Maximum Reverse Recovery Time (Note 1) | trr | 35 | A | |||||
Typical Junction Capacitance (Note 2) | CJ | 10 | ns | |||||
Typical Thermal Resistance (Note 3) | R(ja) | 40 | ns | |||||
Storage and Operation Junction Temperature | TSTG,TJ | -50 to +150 | nC |